Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000381 | 2008year300mm physical | 60,000Physical production capacitywafers/month | announced plannumeric pointForecast / planForecast vintage: see source | MKSS2007 ↗Samsung Opens Largest Wafer Plant in Austin TexasPublished: UnknownVerified available: Unknown — no point-in-time assumptionClassification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Austin_new_300mm_NAND_fab_only
- Wafer basis
- 300mm_physical
- Source locator
- Paragraph2
- Notes
- Plan announced2007; do not assume actual2008 attainment; later Austin logic conversion breaks a simple memory capacity series.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000382 | 2011-09month300mm physical | > 10,000Physical production capacitywafers/month | announced plannumeric boundForecast / plan2011-09-26 | MKSS2011L16 ↗World Largest Fabrication Facility Line16Published: 2011-09-26Verified available: 2011-09-26Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Hwaseong_Line16_initial_NAND_ramp
- Wafer basis
- 300mm_physical
- Source locator
- Projected volume paragraph
- Notes
- Projected volume more than10,000; not audited realized starts, and not contradictory to future200k buildout target.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000383 | 2011-10month300mm physical | 40,000Physical production capacitywafers/month | reported actualnumeric point | MKSS2011S2 ↗Samsung Austin Logic Line Breaks Record AchievementsPublished: 2011-12-13Verified available: 2011-12-13Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Austin_S2_logic_only
- Wafer basis
- 300mm_physical
- Source locator
- Opening paragraph
- Notes
- Achieved targeted wafer-start capacity,45nm low-power logic; separate from memory. Does not represent all Samsung foundry.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000384 | 2011_onwardtarget window300mm physical | > 200,000Physical production capacitywafers/month | announced plannumeric boundForecast / plan2010-05-17 | MKSS2010L16 ↗Samsung 2010 Investment Plan / Line16 GroundbreakingPublished: 2010-05-17Verified available: 2010-05-17Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Hwaseong_Line16_planned_buildout
- Wafer basis
- 300mm_physical
- Source locator
- 반도체 부문, Line16
- Notes
- Source says more than200,000 and phased investment; not demonstrated output in2011.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000385 | 2013-12point in time200mm equivalent | 1,867,000Physical production capacitywafers/month | secondary estimatenumeric point | IS11 ↗Samsung, TSMC, and Micron Top List of IC Industry Capacity LeadersPublished: 2014-01-08Verified available: 2014-01-08Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Installed IC wafer fab capacity including allocated joint-venture shares, IC Insights Global Wafer Capacity scope.
- Wafer basis
- 200mm_equivalent
- Source locator
- Figure 1, p.2
- Notes
- Analyst estimate of installed capacity, not actual starts or shipment. TSMC and other ownership scopes must be checked; Micron includes former Elpida and Rexchip and 95% Inotera output entitlement.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000386 | 2016-12point in time200mm equivalent | 2,598,750Physical production capacitywafers/month | secondary estimatenumeric point | IS12 ↗Atomera Investor Presentation, March 2018Published: 2018-03-12Verified available: 2018-03-12Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- IC Insights Global Wafer Capacity 2017–2021 ranking, as reproduced by Atomera; historical company and JV entity scope.
- Wafer basis
- 200mm_equivalent
- Source locator
- Slide 9: Largest Companies with fabs
- Notes
- Slide explicitly identifies end-2016. Source presentation published March 2018, not March 2018 capacity. Original estimate publication date not established. Preserve historical group and subsidiary rows; do not sum after combining contemporary parent groups.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000387 | 2019-12point in time200mm equivalent | 2,935,000Physical production capacitywafers/month | secondary estimatenumeric point | IS13 ↗Top Five Wafer Capacity Leaders Raise Share of Global Capacity to 54%Published: 2021-02-10Verified available: 2021-02-10Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Installed IC fab capacity per IC Insights; images-sensor-converted Line 13 partly excluded.
- Wafer basis
- 200mm_equivalent
- Source locator
- Figure 1, p.1
- Notes
- IC Insights 2021 publication vintage; not comparable without scope reconciliation to Knometa revised 2020 values. Line 13 partially excluded in 2020 due to conversion to image sensors.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000388 | 2020-12point in time200mm equivalent | 3,060,000Physical production capacitywafers/month | secondary estimatenumeric point | IS13 ↗Top Five Wafer Capacity Leaders Raise Share of Global Capacity to 54%Published: 2021-02-10Verified available: 2021-02-10Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Installed IC fab capacity per IC Insights; images-sensor-converted Line 13 partly excluded.
- Wafer basis
- 200mm_equivalent
- Source locator
- Figure 1, p.1
- Notes
- IC Insights 2021 publication vintage; not comparable without scope reconciliation to Knometa revised 2020 values. Line 13 partially excluded in 2020 due to conversion to image sensors.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000389 | 2020-12point in time200mm equivalent | 3,364,000Physical production capacitywafers/month | secondary estimatenumeric point | IS14 ↗Top Five Leaders Continue Expanding Share of Global IC Fab CapacityPublished: 2022-04-07Verified available: 2022-04-07Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Installed monthly IC wafer capacity, including image sensors, per Knometa 2022.
- Wafer basis
- 200mm_equivalent
- Source locator
- Global IC Wafer Capacity Leaders chart; exact numeric table also IS15
- Notes
- Knometa 2022 publication vintage, includes image sensors. 2020 baseline differs from IC Insights 2021 vintage; keep separate series. Exact table values independently checked against readable Evertiq table IS15.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicscapacitywafer historyDevice manufacturing and memorySCE000390 | 2021-12point in time200mm equivalent | 4,050,000Physical production capacitywafers/month | secondary estimatenumeric point | IS14 ↗Top Five Leaders Continue Expanding Share of Global IC Fab CapacityPublished: 2022-04-07Verified available: 2022-04-07Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Physical production capacity
- Scope
- Installed monthly IC wafer capacity, including image sensors, per Knometa 2022.
- Wafer basis
- 200mm_equivalent
- Source locator
- Global IC Wafer Capacity Leaders chart; exact numeric table also IS15
- Notes
- Knometa 2022 publication vintage, includes image sensors. 2020 baseline differs from IC Insights 2021 vintage; keep separate series. Exact table values independently checked against readable Evertiq table IS15.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-16
- Metric identifier
- capacity
|
Samsung Electronicstechnology launchadvanced packagingDevice manufacturing and memorySCE001128 | 2018milestoneI-Cube2 | I-Cube2 launched in 2018.Technology, mix, growth and othermilestone | reported actualmilestone | PKG017 ↗Samsung Announces Availability of I-Cube4 2.5D IntegrationPublished: 2021-05-06Verified available: 2021-05-06Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- technology_or_product_specific
- Product / technology
- I-Cube2
- Source locator
- Retrospective launch-history paragraph, web line85
- Notes
- Explicit retrospective date in the 2021 company release. Launch year is not a quantified production start or installed capacity.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- technology_launch
|
Samsung Electronicstechnology availabilityadvanced packagingDevice manufacturing and memorySCE001129 | 2020-08-13milestoneX-Cube 7nm/5nm | Silicon-proven 3D IC design methodology and flow became immediately available for 7nm and 5nm.Technology, mix, growth and othermilestone | reported actualmilestone | PKG018 ↗Samsung Announces Silicon-Proven X-Cube 3D IC AvailabilityPublished: 2020-08-13Verified available: 2020-08-13Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- technology_or_product_specific
- Product / technology
- X-Cube 7nm/5nm
- Source locator
- Availability and methodology paragraphs, web lines75–84
- Notes
- Includes a 7nm test chip with SRAM stacked on logic using TSV. Availability does not establish mass production or shipment volume.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- technology_availability
|
Samsung Electronicstechnology availabilityadvanced packagingDevice manufacturing and memorySCE001130 | 2021-05-06milestoneI-Cube4 | Commercial 2.5D solution became immediately available, integrating four HBMs and one logic die.Technology, mix, growth and othermilestone | reported actualmilestone | PKG017 ↗Samsung Announces Availability of I-Cube4 2.5D IntegrationPublished: 2021-05-06Verified available: 2021-05-06Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- technology_or_product_specific
- Product / technology
- I-Cube4
- Source locator
- Immediate-availability paragraph, web lines73–83
- Notes
- Four HBMs describes integration configuration, not four wafers or packaging throughput. No absolute capacity was stated.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- technology_availability
|
Samsung Electronicsbit shipments growth qoqmemory dramDevice manufacturing and memorySCE001165 | 2024-Q4calendar quarterDRAM | decline by a low-teens percentageTechnology, mix, growth and otherpercent_qoqApproximate value / source wording | reported actualqualitative | MEM011 ↗Samsung Electronics CY2024 Q4 Earnings Call scriptPublished: 2025-01-31Verified available: 2025-01-31Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- company DRAM products
- Product / technology
- DRAM
- Comparison basis
- previous_quarter
- Source locator
- Q&A PDF p25
- Notes
- 전분기 대비. 출하 bits 감소는 웨이퍼 생산량 감소와 동일하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- bit_shipments_growth_qoq
|
Samsung Electronicsasp change qoqmemory dramDevice manufacturing and memorySCE001166 | 2024-Q4calendar quarterDRAM | ≈ 20Technology, mix, growth and otherpercent_qoqApproximate value / source wording | reported actualnumeric point | MEM011 ↗Samsung Electronics CY2024 Q4 Earnings Call scriptPublished: 2025-01-31Verified available: 2025-01-31Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- company DRAM products
- Product / technology
- DRAM
- Comparison basis
- previous_quarter
- Source locator
- Q&A PDF p25
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- asp_change_qoq
|
Samsung Electronicsproduct revenue mixmemory dramDevice manufacturing and memorySCE001167 | 2024calendar yearDDR4 + LPDDR4 | low-30% or so of salesRevenue, investment and monetary measurespercent_of_DRAM_revenueApproximate value / source wording | reported actualqualitative | MEM011 ↗Samsung Electronics CY2024 Q4 Earnings Call scriptPublished: 2025-01-31Verified available: 2025-01-31Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Revenue, investment and monetary measures
- Scope
- company DRAM products
- Product / technology
- DDR4 + LPDDR4
- Source locator
- Q&A PDF p36
- Notes
- 해당 DRAM시장 답변에서 공개한 제품 매출비중. 생산bit/wafer 비중이 아님.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- product_revenue_mix
|
Samsung Electronicsproduct revenue mixmemory dramDevice manufacturing and memorySCE001168 | 2025calendar yearDDR4 + LPDDR4 | single-digit percent targetRevenue, investment and monetary measurespercent_of_DRAM_revenueApproximate value / source wording | company forecastqualitativeForecast / plan2025-01-31 | MEM011 ↗Samsung Electronics CY2024 Q4 Earnings Call scriptPublished: 2025-01-31Verified available: 2025-01-31Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Revenue, investment and monetary measures
- Scope
- company DRAM products
- Product / technology
- DDR4 + LPDDR4
- Source locator
- Q&A PDF p36
- Notes
- 2025-01-31 당시 계획. 사후 실적처럼 취급 금지.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- product_revenue_mix
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001169 | 2016-01-19eventHBM2 4GB | mass_production_startedTechnology, mix, growth and otherstage | reported actualmilestone | MEM012 ↗Samsung begins mass producing 4GB HBM2Published: 2016-01-19Verified available: 2016-01-19Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 4GB
- Source locator
- Main release
- Notes
- buffer die 1개는 DRAM core die 수에 포함하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsstack capacitymemory hbmDevice manufacturing and memorySCE001170 | 2016-01-19eventHBM2 4GB | 4Technology, mix, growth and otherGB_per_stack | reported actualnumeric point | MEM012 ↗Samsung begins mass producing 4GB HBM2Published: 2016-01-19Verified available: 2016-01-19Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 4GB
- Source locator
- Main release
- Notes
- buffer die 1개는 DRAM core die 수에 포함하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_capacity
|
Samsung Electronicsdram die stack heightmemory hbmDevice manufacturing and memorySCE001171 | 2016-01-19eventHBM2 4GB | 4Technology, mix, growth and otherDRAM_dies_per_stack | reported actualnumeric point | MEM012 ↗Samsung begins mass producing 4GB HBM2Published: 2016-01-19Verified available: 2016-01-19Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 4GB
- Source locator
- Main release
- Notes
- buffer die 1개는 DRAM core die 수에 포함하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- dram_die_stack_height
|
Samsung Electronicsstack bandwidthmemory hbmDevice manufacturing and memorySCE001172 | 2016-01-19eventHBM2 4GB | 256Technology, mix, growth and otherGB/s_per_stack | reported actualnumeric point | MEM012 ↗Samsung begins mass producing 4GB HBM2Published: 2016-01-19Verified available: 2016-01-19Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 4GB
- Source locator
- Main release
- Notes
- buffer die 1개는 DRAM core die 수에 포함하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_bandwidth
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001173 | 2018-01-11eventHBM2 Aquabolt | mass_production_startedTechnology, mix, growth and otherstage | reported actualmilestone | MEM013 ↗Samsung starts mass production of Aquabolt 8GB HBM2Published: 2018-01-11Verified available: 2018-01-11Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 Aquabolt
- Source locator
- Main release
- Notes
- 본문307GB/s; 각주 계산값307.2GB/s. 2nd-generation HBM2는 Samsung내제품세대이며 JEDEC HBM2E와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsstack capacitymemory hbmDevice manufacturing and memorySCE001174 | 2018-01-11eventHBM2 Aquabolt | 8Technology, mix, growth and otherGB_per_stack | reported actualnumeric point | MEM013 ↗Samsung starts mass production of Aquabolt 8GB HBM2Published: 2018-01-11Verified available: 2018-01-11Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 Aquabolt
- Source locator
- Main release
- Notes
- 본문307GB/s; 각주 계산값307.2GB/s. 2nd-generation HBM2는 Samsung내제품세대이며 JEDEC HBM2E와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_capacity
|
Samsung Electronicsdram die stack heightmemory hbmDevice manufacturing and memorySCE001175 | 2018-01-11eventHBM2 Aquabolt | 8Technology, mix, growth and otherDRAM_dies_per_stack | reported actualnumeric point | MEM013 ↗Samsung starts mass production of Aquabolt 8GB HBM2Published: 2018-01-11Verified available: 2018-01-11Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 Aquabolt
- Source locator
- Main release
- Notes
- 본문307GB/s; 각주 계산값307.2GB/s. 2nd-generation HBM2는 Samsung내제품세대이며 JEDEC HBM2E와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- dram_die_stack_height
|
Samsung Electronicspin data ratememory hbmDevice manufacturing and memorySCE001176 | 2018-01-11eventHBM2 Aquabolt | 2.4Technology, mix, growth and otherGb/s_per_pin | reported actualnumeric point | MEM013 ↗Samsung starts mass production of Aquabolt 8GB HBM2Published: 2018-01-11Verified available: 2018-01-11Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 Aquabolt
- Source locator
- Main release
- Notes
- 본문307GB/s; 각주 계산값307.2GB/s. 2nd-generation HBM2는 Samsung내제품세대이며 JEDEC HBM2E와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- pin_data_rate
|
Samsung Electronicsstack bandwidthmemory hbmDevice manufacturing and memorySCE001177 | 2018-01-11eventHBM2 Aquabolt | 307Technology, mix, growth and otherGB/s_per_stack | reported actualnumeric point | MEM013 ↗Samsung starts mass production of Aquabolt 8GB HBM2Published: 2018-01-11Verified available: 2018-01-11Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2 Aquabolt
- Source locator
- Main release
- Notes
- 본문307GB/s; 각주 계산값307.2GB/s. 2nd-generation HBM2는 Samsung내제품세대이며 JEDEC HBM2E와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_bandwidth
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001178 | 2020-02-04eventHBM2E Flashbolt | market_launchTechnology, mix, growth and otherstage | reported actualmilestone | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Main release
- Notes
- 1y DRAM. 최대시험치4.2Gbps/538GB/s와 안정동작3.2Gbps/410GB/s를 혼합하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsstack capacitymemory hbmDevice manufacturing and memorySCE001179 | 2020-02-04eventHBM2E Flashbolt | 16Technology, mix, growth and otherGB_per_stack | reported actualnumeric point | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Main release
- Notes
- 1y DRAM. 최대시험치4.2Gbps/538GB/s와 안정동작3.2Gbps/410GB/s를 혼합하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_capacity
|
Samsung Electronicsdram die stack heightmemory hbmDevice manufacturing and memorySCE001180 | 2020-02-04eventHBM2E Flashbolt | 8Technology, mix, growth and otherDRAM_dies_per_stack | reported actualnumeric point | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Main release
- Notes
- 1y DRAM. 최대시험치4.2Gbps/538GB/s와 안정동작3.2Gbps/410GB/s를 혼합하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- dram_die_stack_height
|
Samsung Electronicspin data ratememory hbmDevice manufacturing and memorySCE001181 | 2020-02-04eventHBM2E Flashbolt | 3.2Technology, mix, growth and otherGb/s_per_pin | reported actualnumeric point | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Main release
- Notes
- 1y DRAM. 최대시험치4.2Gbps/538GB/s와 안정동작3.2Gbps/410GB/s를 혼합하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- pin_data_rate
|
Samsung Electronicsstack bandwidthmemory hbmDevice manufacturing and memorySCE001182 | 2020-02-04eventHBM2E Flashbolt | 410Technology, mix, growth and otherGB/s_per_stack | reported actualnumeric point | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Main release
- Notes
- 1y DRAM. 최대시험치4.2Gbps/538GB/s와 안정동작3.2Gbps/410GB/s를 혼합하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_bandwidth
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001183 | 2020-H1eventHBM2E Flashbolt | volume_production_plannedTechnology, mix, growth and otherstage | announced planmilestoneForecast / plan2020-02-04 | MEM014 ↗Samsung launches Flashbolt 16GB HBM2EPublished: 2020-02-04Verified available: 2020-02-04Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM2E Flashbolt
- Source locator
- Final paragraph
- Notes
- 2020-02-04 발표 당시 향후계획. 이날 양산완료를 의미하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001184 | 2024-02-27eventHBM3E 12H | developed_and_sampling_startedTechnology, mix, growth and otherstage | reported actualmilestone | MEM015 ↗Samsung develops 36GB HBM3E 12HPublished: 2024-02-27Verified available: 2024-02-27Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Main release
- Notes
- 최대 대역폭 spec이며 실제 wafer output 아님. 양산단계와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsstack capacitymemory hbmDevice manufacturing and memorySCE001185 | 2024-02-27eventHBM3E 12H | 36Technology, mix, growth and otherGB_per_stack | reported actualnumeric point | MEM015 ↗Samsung develops 36GB HBM3E 12HPublished: 2024-02-27Verified available: 2024-02-27Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Main release
- Notes
- 최대 대역폭 spec이며 실제 wafer output 아님. 양산단계와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- stack_capacity
|
Samsung Electronicsdram die stack heightmemory hbmDevice manufacturing and memorySCE001186 | 2024-02-27eventHBM3E 12H | 12Technology, mix, growth and otherDRAM_dies_per_stack | reported actualnumeric point | MEM015 ↗Samsung develops 36GB HBM3E 12HPublished: 2024-02-27Verified available: 2024-02-27Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Main release
- Notes
- 최대 대역폭 spec이며 실제 wafer output 아님. 양산단계와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- dram_die_stack_height
|
Samsung Electronicsmaximum stack bandwidthmemory hbmDevice manufacturing and memorySCE001187 | 2024-02-27eventHBM3E 12H | 1,280Technology, mix, growth and otherGB/s_per_stack | reported actualnumeric point | MEM015 ↗Samsung develops 36GB HBM3E 12HPublished: 2024-02-27Verified available: 2024-02-27Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Main release
- Notes
- 최대 대역폭 spec이며 실제 wafer output 아님. 양산단계와 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- maximum_stack_bandwidth
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001188 | 2024-H1eventHBM3E 12H | mass_production_plannedTechnology, mix, growth and otherstage | announced planmilestoneForecast / plan2024-02-27 | MEM015 ↗Samsung develops 36GB HBM3E 12HPublished: 2024-02-27Verified available: 2024-02-27Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Final production-timing paragraph
- Notes
- 발표시점 계획.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001189 | 2024-04eventHBM3E 8H | mass_production_startedTechnology, mix, growth and otherstage | reported actualmilestone | MEM016 ↗Samsung Electronics first quarter 2024 resultsPublished: 2024-04-30Verified available: 2024-04-30Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 8H
- Source locator
- Memory Business
- Notes
- this month는 공시월2024년4월. 실적기간Q1과 이정표월4월을 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001190 | 2024-Q2eventHBM3E 12H | mass_production_plannedTechnology, mix, growth and otherstage | announced planmilestoneForecast / plan2024-04-30 | MEM016 ↗Samsung Electronics first quarter 2024 resultsPublished: 2024-04-30Verified available: 2024-04-30Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM3E 12H
- Source locator
- Memory Business
- Notes
- 2024-04-30 당시Q2내계획; 개발발표만으로 실제양산이행을 추정하지 않음.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|
Samsung Electronicsmilestone stagememory hbmDevice manufacturing and memorySCE001191 | 2026-02-12eventHBM4 | mass_production_and_commercial_shipments_startedTechnology, mix, growth and otherstage | reported actualmilestone | MEM017 ↗Samsung commercial HBM4 shipments and mass productionPublished: 2026-02-12Verified available: 2026-02-12Classification, scope, notes & source locator- Industry stage
- Device manufacturing and memory
- Measure family
- Technology, mix, growth and other
- Scope
- single HBM stack/product
- Product / technology
- HBM4
- Source locator
- Main release
- Notes
- 1c DRAM core +4nm logic base die. 핀속도 최대13Gbps와 안정11.7Gbps 구분.
- Aggregation rule
- Do not sum unless metric, unit, product, geography, scope, period basis and non-overlap have been independently verified.
- Retrieved
- 2026-10-17
- Metric identifier
- milestone_stage
|